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MT29F512G08EBHAFJ4-3R:A TR

In Stock: 4,435
MT29F512G08EBHAFJ4-3R:A TR - Micron Technology Inc. - Memory
REF: MT29F512G08EBHAFJ4-3R:A TR Micron Technology Inc.
MT29F512G08EBHAFJ4-3R:A TR

Micron Technology Inc.

IC FLSH 512GBIT PARALLEL 132VBGA

MT29F512G08EBHAFJ4-3R:A TR is a Memory manufactured by Micron Technology Inc.. IC FLSH 512GBIT PARALLEL 132VBGA. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 70°C (TA), voltage - supply 2.5V ~ 3.6V, package / case 132-VBGA.

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In Stock: 4,435

Specifications

14 parameters
Product StatusObsolete
Memory TypeNon-Volatile
Memory FormatFLASH
TechnologyFLASH - NAND (TLC)
Memory Size512Gb (64G x 8)
Memory InterfaceParallel
Clock Frequency333 MHz
Write Cycle Time - Word, Page-
Access Time-
Voltage - Supply2.5V ~ 3.6V
Operating Temperature0°C ~ 70°C (TA)
Mounting TypeSurface Mount
Package / Case132-VBGA
Supplier Device Package132-VBGA (12x18)

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Intel ISSI, Integrated Silicon Solution Inc Rochester Electronics, LLC Winbond Electronics Alliance Memory, Inc. Macronix ATP Electronics, Inc. Silicon Motion, Inc. Flip Electronics GSI Technology Inc. GigaDevice Semiconductor (HK) Limited Everspin Technologies Inc.

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