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MT29F512G08EBHAFB17A3WC1-R

In Stock: 5,460
MT29F512G08EBHAFB17A3WC1-R - Micron Technology Inc. - Memory
REF: MT29F512G08EBHAFB17A3WC1-R Micron Technology Inc.
MT29F512G08EBHAFB17A3WC1-R

Micron Technology Inc.

IC FLASH 512GBIT DIE

MT29F512G08EBHAFB17A3WC1-R is a Memory manufactured by Micron Technology Inc.. IC FLASH 512GBIT DIE. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 70°C, voltage - supply 2.5V ~ 3.6V, package / case Die.

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In Stock: 5,460

Specifications

14 parameters
Product StatusObsolete
Memory TypeNon-Volatile
Memory FormatFLASH
TechnologyFLASH - NAND (TLC)
Memory Size512Gb (64G x 8)
Memory InterfaceParallel
Clock Frequency-
Write Cycle Time - Word, Page-
Access Time-
Voltage - Supply2.5V ~ 3.6V
Operating Temperature0°C ~ 70°C
Mounting TypeSurface Mount
Package / CaseDie
Supplier Device PackageDie

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Manufacturers in Memory

Intel ISSI, Integrated Silicon Solution Inc Rochester Electronics, LLC Winbond Electronics Alliance Memory, Inc. Macronix ATP Electronics, Inc. Silicon Motion, Inc. Flip Electronics GSI Technology Inc. GigaDevice Semiconductor (HK) Limited Everspin Technologies Inc.

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