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MT29F4T08EUHBFM4-T:B TR

In Stock: 2,664
MT29F4T08EUHBFM4-T:B TR - Micron Technology Inc. - Memory
REF: MT29F4T08EUHBFM4-T:B TR Micron Technology Inc.
MT29F4T08EUHBFM4-T:B TR

Micron Technology Inc.

IC FLASH 4TB PARALLEL

MT29F4T08EUHBFM4-T:B TR is a Memory manufactured by Micron Technology Inc.. IC FLASH 4TB PARALLEL. Key specifications: operating temperature 0°C ~ 70°C (TA), voltage - supply 1.7V ~ 1.95V, memory size 4Tb (512G x 8).

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In Stock: 2,664

Specifications

14 parameters
Product StatusActive
Memory TypeNon-Volatile
Memory FormatFLASH
TechnologyFLASH - NAND (TLC)
Memory Size4Tb (512G x 8)
Memory InterfaceParallel
Clock Frequency-
Write Cycle Time - Word, Page-
Access Time-
Voltage - Supply1.7V ~ 1.95V
Operating Temperature0°C ~ 70°C (TA)
Mounting Type-
Package / Case-
Supplier Device Package-

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Manufacturers in Memory

Intel ISSI, Integrated Silicon Solution Inc Rochester Electronics, LLC Winbond Electronics Alliance Memory, Inc. Macronix ATP Electronics, Inc. Silicon Motion, Inc. Flip Electronics GSI Technology Inc. GigaDevice Semiconductor (HK) Limited Everspin Technologies Inc.

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