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MT29F384G08EBHBBB0KB3WC1-R

In Stock: 8,010
MT29F384G08EBHBBB0KB3WC1-R - Micron Technology Inc. - Memory
REF: MT29F384G08EBHBBB0KB3WC1-R Micron Technology Inc.
MT29F384G08EBHBBB0KB3WC1-R

Micron Technology Inc.

IC FLASH 384GBIT PARALLEL WAFER

MT29F384G08EBHBBB0KB3WC1-R is a Memory manufactured by Micron Technology Inc.. IC FLASH 384GBIT PARALLEL WAFER. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 70°C (TA), voltage - supply 2.5V ~ 3.6V, package / case Die.

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In Stock: 8,010

Specifications

14 parameters
Product StatusActive
Memory TypeNon-Volatile
Memory FormatFLASH
TechnologyFLASH - NAND
Memory Size384Gb (48G x 8)
Memory InterfaceParallel
Clock Frequency-
Write Cycle Time - Word, Page-
Access Time-
Voltage - Supply2.5V ~ 3.6V
Operating Temperature0°C ~ 70°C (TA)
Mounting TypeSurface Mount
Package / CaseDie
Supplier Device PackageDie

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Manufacturers in Memory

Intel ISSI, Integrated Silicon Solution Inc Rochester Electronics, LLC Winbond Electronics Alliance Memory, Inc. Macronix ATP Electronics, Inc. Silicon Motion, Inc. Flip Electronics GSI Technology Inc. GigaDevice Semiconductor (HK) Limited Everspin Technologies Inc.

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