RFQ List My Parts 0
Get a Quote Contact

MT29F2T08CUHBBM4-3R:B TR

In Stock: 1,975
MT29F2T08CUHBBM4-3R:B TR - Micron Technology Inc. - Memory
REF: MT29F2T08CUHBBM4-3R:B TR Micron Technology Inc.
MT29F2T08CUHBBM4-3R:B TR

Micron Technology Inc.

IC FLASH 2TB PARALLEL 333MHZ

MT29F2T08CUHBBM4-3R:B TR is a Memory manufactured by Micron Technology Inc.. IC FLASH 2TB PARALLEL 333MHZ. Key specifications: operating temperature 0°C ~ 70°C (TA), voltage - supply 2.5V ~ 3.6V, memory size 2Tb (256G x 8).

Request a Quote

In Stock: 1,975

Specifications

14 parameters
Product StatusNot For New Designs
Memory TypeNon-Volatile
Memory FormatFLASH
TechnologyFLASH - NAND
Memory Size2Tb (256G x 8)
Memory InterfaceParallel
Clock Frequency333 MHz
Write Cycle Time - Word, Page-
Access Time-
Voltage - Supply2.5V ~ 3.6V
Operating Temperature0°C ~ 70°C (TA)
Mounting Type-
Package / Case-
Supplier Device Package-

Related Products

MT25QL512ABB8E12-0SIT - Micron Technology Inc. Micron Technology Inc. MT25QL512ABB8E12-0SIT 8.22000 RFQ JS28F128J3F75B TR - Micron Technology Inc. Micron Technology Inc. JS28F128J3F75B TR 5.04061 RFQ S29GL01GP12TFI023 - Flip Electronics Flip Electronics S29GL01GP12TFI023 15.27000 RFQ HN27C256AG15 - Renesas Electronics America Inc Renesas Electronics America Inc HN27C256AG15 9.69000 RFQ CY7C1370S-200AXCKJ - Rochester Electronics, LLC Rochester Electronics, LLC CY7C1370S-200AXCKJ 27.20000 RFQ S29GL128P11TFI020 - Infineon Technologies Infineon Technologies S29GL128P11TFI020 7.08000 RFQ

Manufacturers in Memory

Intel ISSI, Integrated Silicon Solution Inc Rochester Electronics, LLC Winbond Electronics Alliance Memory, Inc. Macronix ATP Electronics, Inc. Silicon Motion, Inc. Flip Electronics GSI Technology Inc. GigaDevice Semiconductor (HK) Limited Everspin Technologies Inc.

Need a Quote for MT29F2T08CUHBBM4-3R:B TR?

Submit your RFQ and get a quote within 24 hours.

Submit RFQ View All Memory
Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →