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MT29F256G08EBHBFB16C3WC1-FES

In Stock: 2,801
MT29F256G08EBHBFB16C3WC1-FES - Micron Technology Inc. - Memory
REF: MT29F256G08EBHBFB16C3WC1-FES Micron Technology Inc.
MT29F256G08EBHBFB16C3WC1-FES

Micron Technology Inc.

IC FLASH 256G PARALLEL

MT29F256G08EBHBFB16C3WC1-FES is a Memory manufactured by Micron Technology Inc.. IC FLASH 256G PARALLEL. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 70°C (TA), voltage - supply 2.5V ~ 3.6V, package / case Die.

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In Stock: 2,801

Specifications

14 parameters
Product StatusActive
Memory TypeNon-Volatile
Memory FormatFLASH
TechnologyFLASH - NAND (TLC)
Memory Size256Gb (32G x 8)
Memory InterfaceParallel
Clock Frequency333 MHz
Write Cycle Time - Word, Page-
Access Time-
Voltage - Supply2.5V ~ 3.6V
Operating Temperature0°C ~ 70°C (TA)
Mounting TypeSurface Mount
Package / CaseDie
Supplier Device PackageDie

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Manufacturers in Memory

Intel ISSI, Integrated Silicon Solution Inc Rochester Electronics, LLC Winbond Electronics Alliance Memory, Inc. Macronix ATP Electronics, Inc. Silicon Motion, Inc. Flip Electronics GSI Technology Inc. GigaDevice Semiconductor (HK) Limited Everspin Technologies Inc.

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