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MT29F1G16ABBEAMD-IT:E TR

In Stock: 3,230
MT29F1G16ABBEAMD-IT:E TR - Micron Technology Inc. - Memory
REF: MT29F1G16ABBEAMD-IT:E TR Micron Technology Inc.
MT29F1G16ABBEAMD-IT:E TR

Micron Technology Inc.

IC FLASH 1GBIT PARALLEL 130VFBGA

MT29F1G16ABBEAMD-IT:E TR is a Memory manufactured by Micron Technology Inc.. IC FLASH 1GBIT PARALLEL 130VFBGA. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 1.7V ~ 1.95V, package / case 130-VFBGA.

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In Stock: 3,230

Specifications

14 parameters
Product StatusObsolete
Memory TypeNon-Volatile
Memory FormatFLASH
TechnologyFLASH - NAND
Memory Size1Gb (64M x 16)
Memory InterfaceParallel
Clock Frequency-
Write Cycle Time - Word, Page-
Access Time-
Voltage - Supply1.7V ~ 1.95V
Operating Temperature-40°C ~ 85°C (TA)
Mounting TypeSurface Mount
Package / Case130-VFBGA
Supplier Device Package130-VFBGA (8x9)

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Intel ISSI, Integrated Silicon Solution Inc Rochester Electronics, LLC Winbond Electronics Alliance Memory, Inc. Macronix ATP Electronics, Inc. Silicon Motion, Inc. Flip Electronics GSI Technology Inc. GigaDevice Semiconductor (HK) Limited Everspin Technologies Inc.

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