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MT29F1G08ABBEAMD-IT:E TR

In Stock: 1,491
MT29F1G08ABBEAMD-IT:E TR - Micron Technology Inc. - Memory
REF: MT29F1G08ABBEAMD-IT:E TR Micron Technology Inc.
MT29F1G08ABBEAMD-IT:E TR

Micron Technology Inc.

IC FLASH 1GBIT PARALLEL 130VFBGA

MT29F1G08ABBEAMD-IT:E TR is a Memory manufactured by Micron Technology Inc.. IC FLASH 1GBIT PARALLEL 130VFBGA. Key specifications: operating temperature -40°C ~ 85°C (TA), voltage - supply 1.7V ~ 1.95V, memory size 1Gb (128M x 8).

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In Stock: 1,491

Specifications

14 parameters
Product StatusActive
Memory TypeNon-Volatile
Memory FormatFLASH
TechnologyFLASH - NAND
Memory Size1Gb (128M x 8)
Memory InterfaceParallel
Clock Frequency-
Write Cycle Time - Word, Page-
Access Time-
Voltage - Supply1.7V ~ 1.95V
Operating Temperature-40°C ~ 85°C (TA)
Mounting Type-
Package / Case-
Supplier Device Package-

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Manufacturers in Memory

Intel ISSI, Integrated Silicon Solution Inc Rochester Electronics, LLC Winbond Electronics Alliance Memory, Inc. Macronix ATP Electronics, Inc. Silicon Motion, Inc. Flip Electronics GSI Technology Inc. GigaDevice Semiconductor (HK) Limited Everspin Technologies Inc.

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