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MT29E512G08CMCBBH7-6:B TR

In Stock: 8,821
MT29E512G08CMCBBH7-6:B TR - Micron Technology Inc. - Memory
REF: MT29E512G08CMCBBH7-6:B TR Micron Technology Inc.
MT29E512G08CMCBBH7-6:B TR

Micron Technology Inc.

IC FLASH 512GBIT PARALLEL 167MHZ

MT29E512G08CMCBBH7-6:B TR is a Memory manufactured by Micron Technology Inc.. IC FLASH 512GBIT PARALLEL 167MHZ. Key specifications: operating temperature 0°C ~ 70°C (TA), voltage - supply 2.7V ~ 3.6V, memory size 512Gb (64G x 8).

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In Stock: 8,821

Specifications

14 parameters
Product StatusObsolete
Memory TypeNon-Volatile
Memory FormatFLASH
TechnologyFLASH - NAND
Memory Size512Gb (64G x 8)
Memory InterfaceParallel
Clock Frequency167 MHz
Write Cycle Time - Word, Page-
Access Time-
Voltage - Supply2.7V ~ 3.6V
Operating Temperature0°C ~ 70°C (TA)
Mounting Type-
Package / Case-
Supplier Device Package-

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Manufacturers in Memory

Intel ISSI, Integrated Silicon Solution Inc Rochester Electronics, LLC Winbond Electronics Alliance Memory, Inc. Macronix ATP Electronics, Inc. Silicon Motion, Inc. Flip Electronics GSI Technology Inc. GigaDevice Semiconductor (HK) Limited Everspin Technologies Inc.

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