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MT29E3T08EUHBBM4-3ES:B TR

In Stock: 5,227
MT29E3T08EUHBBM4-3ES:B TR - Micron Technology Inc. - Memory
REF: MT29E3T08EUHBBM4-3ES:B TR Micron Technology Inc.
MT29E3T08EUHBBM4-3ES:B TR

Micron Technology Inc.

IC FLASH 3TB PARALLEL 333MHZ

MT29E3T08EUHBBM4-3ES:B TR is a Memory manufactured by Micron Technology Inc.. IC FLASH 3TB PARALLEL 333MHZ. Key specifications: operating temperature 0°C ~ 70°C (TA), voltage - supply 2.5V ~ 3.6V, memory size 3Tb (384G x 8).

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In Stock: 5,227

Specifications

14 parameters
Product StatusActive
Memory TypeNon-Volatile
Memory FormatFLASH
TechnologyFLASH - NAND
Memory Size3Tb (384G x 8)
Memory InterfaceParallel
Clock Frequency333 MHz
Write Cycle Time - Word, Page-
Access Time-
Voltage - Supply2.5V ~ 3.6V
Operating Temperature0°C ~ 70°C (TA)
Mounting Type-
Package / Case-
Supplier Device Package-

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Manufacturers in Memory

Intel ISSI, Integrated Silicon Solution Inc Rochester Electronics, LLC Winbond Electronics Alliance Memory, Inc. Macronix ATP Electronics, Inc. Silicon Motion, Inc. Flip Electronics GSI Technology Inc. GigaDevice Semiconductor (HK) Limited Everspin Technologies Inc.

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