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JANTXV2N6301P

In Stock: 5,907
JANTXV2N6301P - Microchip Technology - Transistors - Bipolar (BJT) - Single
REF: JANTXV2N6301P Microchip Technology
JANTXV2N6301P

Microchip Technology

POWER BJT

JANTXV2N6301P is a Transistors - Bipolar (BJT) - Single manufactured by Microchip Technology. POWER BJT. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 200°C (TJ), package / case TO-213AA, TO-66-2, current - collector (ic) (max) 8 A.

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In Stock: 5,907

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)8 A
Voltage - Collector Emitter Breakdown (Max)80 V
Vce Saturation (Max) @ Ib, Ic3V @ 80mA, 8A
Current - Collector Cutoff (Max)500µA
DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 4A, 3V
Power - Max75 W
Frequency - Transition-
Operating Temperature-55°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-213AA, TO-66-2
Supplier Device PackageTO-66 (TO-213AA)

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