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JANTXV2N3767P

In Stock: 1,005
JANTXV2N3767P - Microchip Technology - Transistors - Bipolar (BJT) - Single
REF: JANTXV2N3767P Microchip Technology
JANTXV2N3767P

Microchip Technology

POWER BJT

JANTXV2N3767P is a Transistors - Bipolar (BJT) - Single manufactured by Microchip Technology. POWER BJT. Key specifications: mounting type Through Hole, operating temperature -65°C ~ 200°C, package / case TO-213AA, TO-66-2, current - collector (ic) (max) 4 A.

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In Stock: 1,005

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)80 V
Vce Saturation (Max) @ Ib, Ic2.5V @ 100mA, 1A
Current - Collector Cutoff (Max)500µA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 500mA, 5V
Power - Max25 W
Frequency - Transition-
Operating Temperature-65°C ~ 200°C
Mounting TypeThrough Hole
Package / CaseTO-213AA, TO-66-2
Supplier Device PackageTO-66 (TO-213AA)

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