JAN2N2060 - Microchip Technology - Transistors - Bipolar (BJT) - Arrays
REF: JAN2N2060 Microchip Technology
JAN2N2060

Microchip Technology

NPN LOW POWER SILICON TRANSISTOR

JAN2N2060 is a Transistors - Bipolar (BJT) - Arrays manufactured by Microchip Technology. NPN LOW POWER SILICON TRANSISTOR. Key specifications: mounting type Through Hole, operating temperature -65°C ~ 200°C (TJ), package / case TO-78-6 Metal Can, current - collector (ic) (max) 500mA.

In Stock: 2,336

Specifications

13 parameters
Product StatusActive
Transistor Type2 NPN (Dual)
Current - Collector (Ic) (Max)500mA
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic300mV @ 5mA, 50mA
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 10mA, 5V
Power - Max600mW
Frequency - Transition-
Operating Temperature-65°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-78-6 Metal Can
Supplier Device PackageTO-78-6

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