JAN1N5809US - Microchip Technology - Diodes - Rectifiers - Single
REF: JAN1N5809US Microchip Technology
JAN1N5809US

Microchip Technology

DIODE GEN PURP 100V 6A B-MELF

JAN1N5809US is a Diodes - Rectifiers - Single manufactured by Microchip Technology. DIODE GEN PURP 100V 6A B-MELF. Key specifications: mounting type Surface Mount, package / case SQ-MELF, B.

In Stock: 9,948

Specifications

13 parameters
Product StatusActive
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)100 V
Current - Average Rectified (Io)6A
Voltage - Forward (Vf) (Max) @ If875 mV @ 4 A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)30 ns
Current - Reverse Leakage @ Vr5 µA @ 100 V
Capacitance @ Vr, F60pF @ 10V, 1MHz
Mounting TypeSurface Mount
Package / CaseSQ-MELF, B
Supplier Device PackageB, SQ-MELF
Operating Temperature - Junction-65°C ~ 175°C

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