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GC9986-8JR

In Stock: 4,776
GC9986-8JR - Microchip Technology - Diodes - RF
REF: GC9986-8JR Microchip Technology
GC9986-8JR

Microchip Technology

SI SCHOTTKY NON HERMETIC BEAM LE

GC9986-8JR is a Diodes - RF manufactured by Microchip Technology. SI SCHOTTKY NON HERMETIC BEAM LE. Key specifications: operating temperature -65°C ~ 150°C, package / case 4-SMD, Flat Lead.

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In Stock: 4,776

Specifications

10 parameters
Product StatusActive
Diode TypeSchottky - 1 Bridge
Voltage - Peak Reverse (Max)5V
Current - Max-
Capacitance @ Vr, F0.15pF @ 0V, 1MHz
Resistance @ If, F15Ohm @ 10mA, 100MHz
Power Dissipation (Max)100 mW
Operating Temperature-65°C ~ 150°C
Package / Case4-SMD, Flat Lead
Supplier Device Package-

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