2N7377 - Microchip Technology - Transistors - Bipolar (BJT) - Single
REF: 2N7377 Microchip Technology
2N7377

Microchip Technology

POWER BJT

2N7377 is a Transistors - Bipolar (BJT) - Single manufactured by Microchip Technology. POWER BJT. Key specifications: mounting type Through Hole, operating temperature -65°C ~ 200°C (TJ), supplier device package TO-254, current - collector (ic) (max) 5 A.

In Stock: 1,544

Specifications

13 parameters
Product StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)5 A
Voltage - Collector Emitter Breakdown (Max)300 V
Vce Saturation (Max) @ Ib, Ic-
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Power - Max58 W
Frequency - Transition-
Operating Temperature-65°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Package / Case-
Supplier Device PackageTO-254

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