2N7373 - Microchip Technology - Transistors - Bipolar (BJT) - Single
REF: 2N7373 Microchip Technology
2N7373

Microchip Technology

POWER BJT

2N7373 is a Transistors - Bipolar (BJT) - Single manufactured by Microchip Technology. POWER BJT. Key specifications: mounting type Through Hole, operating temperature -65°C ~ 200°C (TJ), supplier device package TO-254AA, current - collector (ic) (max) 5 A.

In Stock: 4,495

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)5 A
Voltage - Collector Emitter Breakdown (Max)80 V
Vce Saturation (Max) @ Ib, Ic1.5V @ 500mA, 5A
Current - Collector Cutoff (Max)50µA
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 2.5A, 5V
Power - Max4 W
Frequency - Transition-
Operating Temperature-65°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Package / Case-
Supplier Device PackageTO-254AA

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