2N6687 - Microchip Technology - Transistors - Bipolar (BJT) - Single
REF: 2N6687 Microchip Technology
2N6687

Microchip Technology

POWER BJT

2N6687 is a Transistors - Bipolar (BJT) - Single manufactured by Microchip Technology. POWER BJT. Key specifications: mounting type Through Hole, package / case TO-204AA, TO-3, current - collector (ic) (max) 25 A, power - max 200 W.

In Stock: 4,414

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)25 A
Voltage - Collector Emitter Breakdown (Max)180 V
Vce Saturation (Max) @ Ib, Ic1.5V @ 2.5mA, 10mA
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 10A, 2V
Power - Max200 W
Frequency - Transition20MHz
Operating Temperature-
Mounting TypeThrough Hole
Package / CaseTO-204AA, TO-3
Supplier Device Package-

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