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2N657S

In Stock: 6,424
2N657S - Microchip Technology - Transistors - Bipolar (BJT) - Single
REF: 2N657S Microchip Technology
2N657S

Microchip Technology

POWER BJT

2N657S is a Transistors - Bipolar (BJT) - Single manufactured by Microchip Technology. POWER BJT. Key specifications: mounting type Through Hole, operating temperature -65°C ~ 200°C (TJ), package / case TO-205AA, TO-5-3 Metal Can, power - max 600 mW.

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In Stock: 6,424

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)-
Voltage - Collector Emitter Breakdown (Max)40 V
Vce Saturation (Max) @ Ib, Ic1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA, 10V
Power - Max600 mW
Frequency - Transition-
Operating Temperature-65°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-205AA, TO-5-3 Metal Can
Supplier Device PackageTO-5AA

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