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2N6579

In Stock: 9,204
2N6579 - Microchip Technology - Transistors - Bipolar (BJT) - Single
REF: 2N6579 Microchip Technology
2N6579

Microchip Technology

POWER BJT

2N6579 is a Transistors - Bipolar (BJT) - Single manufactured by Microchip Technology. POWER BJT. Key specifications: mounting type Through Hole, operating temperature -65°C ~ 200°C (TJ), package / case TO-204AA, TO-3, current - collector (ic) (max) 12 A.

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In Stock: 9,204

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)12 A
Voltage - Collector Emitter Breakdown (Max)350 V
Vce Saturation (Max) @ Ib, Ic1.5V @ 500µA, 3mA
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Power - Max125 W
Frequency - Transition-
Operating Temperature-65°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-204AA, TO-3
Supplier Device Package-

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