2N6512 - Microchip Technology - Transistors - Bipolar (BJT) - Single
REF: 2N6512 Microchip Technology
2N6512

Microchip Technology

POWER BJT

2N6512 is a Transistors - Bipolar (BJT) - Single manufactured by Microchip Technology. POWER BJT. Key specifications: mounting type Through Hole, package / case TO-204AA, TO-3, current - collector (ic) (max) 7 A, power - max 120 W.

In Stock: 3,975

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)7 A
Voltage - Collector Emitter Breakdown (Max)300 V
Vce Saturation (Max) @ Ib, Ic1.5V @ 800mA, 4A
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 4A, 3V
Power - Max120 W
Frequency - Transition3MHz
Operating Temperature-
Mounting TypeThrough Hole
Package / CaseTO-204AA, TO-3
Supplier Device Package-

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