2N6385P - Microchip Technology - Transistors - Bipolar (BJT) - Single
REF: 2N6385P Microchip Technology
2N6385P

Microchip Technology

POWER BJT

2N6385P is a Transistors - Bipolar (BJT) - Single manufactured by Microchip Technology. POWER BJT. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-204AA, TO-3, current - collector (ic) (max) 10 A.

In Stock: 7,898

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)10 A
Voltage - Collector Emitter Breakdown (Max)80 V
Vce Saturation (Max) @ Ib, Ic3V @ 100mA, 10A
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 5A, 3V
Power - Max6 W
Frequency - Transition-
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-204AA, TO-3
Supplier Device PackageTO-204AA (TO-3)

Need a Quote for 2N6385P?

Submit your RFQ and get a quote within 24 hours.

Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →