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2N6352P

In Stock: 7,999
2N6352P - Microchip Technology - Transistors - Bipolar (BJT) - Single
REF: 2N6352P Microchip Technology
2N6352P

Microchip Technology

POWER BJT

2N6352P is a Transistors - Bipolar (BJT) - Single manufactured by Microchip Technology. POWER BJT. Key specifications: mounting type Through Hole, operating temperature -65°C ~ 200°C (TJ), package / case TO-213AA, TO-66-3, current - collector (ic) (max) 5 A.

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In Stock: 7,999

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)5 A
Voltage - Collector Emitter Breakdown (Max)80 V
Vce Saturation (Max) @ Ib, Ic2.5V @ 10mA, 5A
Current - Collector Cutoff (Max)1µA
DC Current Gain (hFE) (Min) @ Ic, Vce2000 @ 5A, 5V
Power - Max2 W
Frequency - Transition-
Operating Temperature-65°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-213AA, TO-66-3
Supplier Device PackageTO-66 (TO-213AA)

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