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2N6351E3

In Stock: 9,650
2N6351E3 - Microchip Technology - Transistors - Bipolar (BJT) - Single
REF: 2N6351E3 Microchip Technology
2N6351E3

Microchip Technology

POWER BJT

2N6351E3 is a Transistors - Bipolar (BJT) - Single manufactured by Microchip Technology. POWER BJT. Key specifications: mounting type Through Hole, operating temperature -65°C ~ 200°C, package / case TO-205AC, TO-33-4 Metal Can, current - collector (ic) (max) 5 A.

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In Stock: 9,650

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)5 A
Voltage - Collector Emitter Breakdown (Max)150 V
Vce Saturation (Max) @ Ib, Ic2.5V @ 10mA, 5A
Current - Collector Cutoff (Max)1µA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 5A, 5V
Power - Max1 W
Frequency - Transition-
Operating Temperature-65°C ~ 200°C
Mounting TypeThrough Hole
Package / CaseTO-205AC, TO-33-4 Metal Can
Supplier Device PackageTO-33

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