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2N6306T1

In Stock: 8,853
2N6306T1 - Microchip Technology - Transistors - Bipolar (BJT) - Single
REF: 2N6306T1 Microchip Technology
2N6306T1

Microchip Technology

POWER BJT

2N6306T1 is a Transistors - Bipolar (BJT) - Single manufactured by Microchip Technology. POWER BJT. Key specifications: mounting type Through Hole, operating temperature -65°C ~ 200°C, package / case TO-204AA, TO-3, current - collector (ic) (max) 8 A.

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In Stock: 8,853

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)8 A
Voltage - Collector Emitter Breakdown (Max)250 V
Vce Saturation (Max) @ Ib, Ic5V @ 2A, 8A
Current - Collector Cutoff (Max)50µA
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 3A, 5V
Power - Max125 W
Frequency - Transition-
Operating Temperature-65°C ~ 200°C
Mounting TypeThrough Hole
Package / CaseTO-204AA, TO-3
Supplier Device Package-

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