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2N6211P

In Stock: 4,380
2N6211P - Microchip Technology - Transistors - Bipolar (BJT) - Single
REF: 2N6211P Microchip Technology
2N6211P

Microchip Technology

POWER BJT

2N6211P is a Transistors - Bipolar (BJT) - Single manufactured by Microchip Technology. POWER BJT. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 200°C, package / case TO-213AA, TO-66-2, current - collector (ic) (max) 2 A.

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In Stock: 4,380

Specifications

13 parameters
Product StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)225 V
Vce Saturation (Max) @ Ib, Ic1.4V @ 125mA, 1A
Current - Collector Cutoff (Max)5mA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 1A, 5V
Power - Max3 W
Frequency - Transition-
Operating Temperature-55°C ~ 200°C
Mounting TypeThrough Hole
Package / CaseTO-213AA, TO-66-2
Supplier Device PackageTO-66 (TO-213AA)

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