2N5730 - Microchip Technology - Transistors - Bipolar (BJT) - Single
REF: 2N5730 Microchip Technology
2N5730

Microchip Technology

POWER BJT

2N5730 is a Transistors - Bipolar (BJT) - Single manufactured by Microchip Technology. POWER BJT. Key specifications: mounting type Stud Mount, package / case TO-210AA, TO-59-4, Stud, current - collector (ic) (max) 10 A, power - max 45 W.

In Stock: 2,353

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)10 A
Voltage - Collector Emitter Breakdown (Max)80 V
Vce Saturation (Max) @ Ib, Ic-
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Power - Max45 W
Frequency - Transition-
Operating Temperature-
Mounting TypeStud Mount
Package / CaseTO-210AA, TO-59-4, Stud
Supplier Device PackageTO-59

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