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2N5660U3

In Stock: 8,601
2N5660U3 - Microchip Technology - Transistors - Bipolar (BJT) - Single
REF: 2N5660U3 Microchip Technology
2N5660U3

Microchip Technology

POWER BJT

2N5660U3 is a Transistors - Bipolar (BJT) - Single manufactured by Microchip Technology. POWER BJT. Key specifications: mounting type Surface Mount, operating temperature -65°C ~ 200°C (TJ), package / case 3-SMD, No Lead, current - collector (ic) (max) 2 A.

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In Stock: 8,601

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)200 V
Vce Saturation (Max) @ Ib, Ic800mV @ 400mA, 2A
Current - Collector Cutoff (Max)200nA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 500mA, 5V
Power - Max2 W
Frequency - Transition-
Operating Temperature-65°C ~ 200°C (TJ)
Mounting TypeSurface Mount
Package / Case3-SMD, No Lead
Supplier Device PackageU3

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