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2N5612

In Stock: 3,576
2N5612 - Microchip Technology - Transistors - Bipolar (BJT) - Single
REF: 2N5612 Microchip Technology
2N5612

Microchip Technology

POWER BJT

2N5612 is a Transistors - Bipolar (BJT) - Single manufactured by Microchip Technology. POWER BJT. Key specifications: mounting type Through Hole, package / case TO-213AA, TO-66-2, current - collector (ic) (max) 5 A, power - max 25 W.

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In Stock: 3,576

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)5 A
Voltage - Collector Emitter Breakdown (Max)100 V
Vce Saturation (Max) @ Ib, Ic-
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Power - Max25 W
Frequency - Transition-
Operating Temperature-
Mounting TypeThrough Hole
Package / CaseTO-213AA, TO-66-2
Supplier Device PackageTO-66 (TO-213AA)

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