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2N5601

In Stock: 8,952
2N5601 - Microchip Technology - Transistors - Bipolar (BJT) - Single
REF: 2N5601 Microchip Technology
2N5601

Microchip Technology

POWER BJT

2N5601 is a Transistors - Bipolar (BJT) - Single manufactured by Microchip Technology. POWER BJT. Key specifications: mounting type Through Hole, operating temperature -65°C ~ 200°C (TJ), package / case TO-213AA, TO-66-2, current - collector (ic) (max) 2 A.

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In Stock: 8,952

Specifications

13 parameters
Product StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)80 V
Vce Saturation (Max) @ Ib, Ic850mV @ 200µA, 1mA
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Power - Max20 W
Frequency - Transition-
Operating Temperature-65°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-213AA, TO-66-2
Supplier Device PackageTO-66 (TO-213AA)

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