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2N5552

In Stock: 6,959
2N5552 - Microchip Technology - Transistors - Bipolar (BJT) - Single
REF: 2N5552 Microchip Technology
2N5552

Microchip Technology

POWER BJT

2N5552 is a Transistors - Bipolar (BJT) - Single manufactured by Microchip Technology. POWER BJT. Key specifications: mounting type Through Hole, operating temperature -65°C ~ 200°C (TJ), package / case TO-205AA, TO-5-3 Metal Can, current - collector (ic) (max) 10 A.

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In Stock: 6,959

Specifications

13 parameters
Product StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)10 A
Voltage - Collector Emitter Breakdown (Max)80 V
Vce Saturation (Max) @ Ib, Ic500mV @ 500µA, 5mA
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Power - Max15 W
Frequency - Transition-
Operating Temperature-65°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-205AA, TO-5-3 Metal Can
Supplier Device PackageTO-5AA

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