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2N5416L

In Stock: 5,039
2N5416L - Microchip Technology - Transistors - Bipolar (BJT) - Single
REF: 2N5416L Microchip Technology
2N5416L

Microchip Technology

POWER BJT

2N5416L is a Transistors - Bipolar (BJT) - Single manufactured by Microchip Technology. POWER BJT. Key specifications: mounting type Through Hole, operating temperature -65°C ~ 200°C (TJ), package / case TO-205AA, TO-5-3 Metal Can, current - collector (ic) (max) 1 A.

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In Stock: 5,039

Specifications

13 parameters
Product StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)300 V
Vce Saturation (Max) @ Ib, Ic2V @ 5mA, 50mA
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 50mA, 10V
Power - Max750 mW
Frequency - Transition-
Operating Temperature-65°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-205AA, TO-5-3 Metal Can
Supplier Device PackageTO-5

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