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2N5339QFN/TR

In Stock: 5,991
2N5339QFN/TR - Microchip Technology - Transistors - Bipolar (BJT) - Single
REF: 2N5339QFN/TR Microchip Technology
2N5339QFN/TR

Microchip Technology

POWER BJT

2N5339QFN/TR is a Transistors - Bipolar (BJT) - Single manufactured by Microchip Technology. POWER BJT. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 200°C, package / case TO-205AD, TO-39-3 Metal Can, current - collector (ic) (max) 5 A.

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In Stock: 5,991

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)5 A
Voltage - Collector Emitter Breakdown (Max)100 V
Vce Saturation (Max) @ Ib, Ic1.2V @ 500mA, 5A
Current - Collector Cutoff (Max)100µA
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 2A, 2V
Power - Max1 W
Frequency - Transition-
Operating Temperature-55°C ~ 200°C
Mounting TypeThrough Hole
Package / CaseTO-205AD, TO-39-3 Metal Can
Supplier Device PackageTO-39 (TO-205AD)

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