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2N5322E3

In Stock: 8,173
2N5322E3 - Microchip Technology - Transistors - Bipolar (BJT) - Single
REF: 2N5322E3 Microchip Technology
2N5322E3

Microchip Technology

POWER BJT

2N5322E3 is a Transistors - Bipolar (BJT) - Single manufactured by Microchip Technology. POWER BJT. Key specifications: mounting type Through Hole, package / case TO-205AA, TO-5-3 Metal Can, current - collector (ic) (max) 2 A, power - max 10 W.

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In Stock: 8,173

Specifications

13 parameters
Product StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)75 V
Vce Saturation (Max) @ Ib, Ic-
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Power - Max10 W
Frequency - Transition-
Operating Temperature-
Mounting TypeThrough Hole
Package / CaseTO-205AA, TO-5-3 Metal Can
Supplier Device PackageTO-5AA

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