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2N5011S

In Stock: 5,773
2N5011S - Microchip Technology - Transistors - Bipolar (BJT) - Single
REF: 2N5011S Microchip Technology
2N5011S

Microchip Technology

POWER BJT

2N5011S is a Transistors - Bipolar (BJT) - Single manufactured by Microchip Technology. POWER BJT. Key specifications: mounting type Through Hole, operating temperature -65°C ~ 200°C (TJ), package / case TO-205AD, TO-39-3 Metal Can, current - collector (ic) (max) 200 mA.

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In Stock: 5,773

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)200 mA
Voltage - Collector Emitter Breakdown (Max)600 V
Vce Saturation (Max) @ Ib, Ic1.5V @ 5mA, 25mA
Current - Collector Cutoff (Max)10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 25mA, 10V
Power - Max1 W
Frequency - Transition-
Operating Temperature-65°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-205AD, TO-39-3 Metal Can
Supplier Device PackageTO-39 (TO-205AD)

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