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2N5010U4

In Stock: 1,439
2N5010U4 - Microchip Technology - Transistors - Bipolar (BJT) - Single
REF: 2N5010U4 Microchip Technology
2N5010U4

Microchip Technology

POWER BJT

2N5010U4 is a Transistors - Bipolar (BJT) - Single manufactured by Microchip Technology. POWER BJT. Key specifications: mounting type Surface Mount, operating temperature -65°C ~ 200°C (TJ), package / case 3-SMD, No Lead, current - collector (ic) (max) 200 mA.

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In Stock: 1,439

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)200 mA
Voltage - Collector Emitter Breakdown (Max)500 V
Vce Saturation (Max) @ Ib, Ic1.4V @ 5mA, 25mA
Current - Collector Cutoff (Max)10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 25mA, 10V
Power - Max1 W
Frequency - Transition-
Operating Temperature-65°C ~ 200°C (TJ)
Mounting TypeSurface Mount
Package / Case3-SMD, No Lead
Supplier Device PackageU4

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