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2N4877

In Stock: 3,333
2N4877 - Microchip Technology - Transistors - Bipolar (BJT) - Single
REF: 2N4877 Microchip Technology
2N4877

Microchip Technology

POWER BJT

2N4877 is a Transistors - Bipolar (BJT) - Single manufactured by Microchip Technology. POWER BJT. Key specifications: mounting type Through Hole, package / case TO-205AA, TO-5-3 Metal Can, current - collector (ic) (max) 4 A, power - max 10 W.

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In Stock: 3,333

Specifications

13 parameters
Product StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)60 V
Vce Saturation (Max) @ Ib, Ic-
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Power - Max10 W
Frequency - Transition-
Operating Temperature-
Mounting TypeThrough Hole
Package / CaseTO-205AA, TO-5-3 Metal Can
Supplier Device PackageTO-5AA

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