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2N3879A

In Stock: 1,090
2N3879A - Microchip Technology - Transistors - Bipolar (BJT) - Single
REF: 2N3879A Microchip Technology
2N3879A

Microchip Technology

POWER BJT

2N3879A is a Transistors - Bipolar (BJT) - Single manufactured by Microchip Technology. POWER BJT. Key specifications: mounting type Through Hole, operating temperature -65°C ~ 200°C (TJ), package / case TO-213AA, TO-66-2, current - collector (ic) (max) 7 A.

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In Stock: 1,090

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)7 A
Voltage - Collector Emitter Breakdown (Max)75 V
Vce Saturation (Max) @ Ib, Ic1.2V @ 400mA, 4A
Current - Collector Cutoff (Max)25mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 4A, 5V
Power - Max35 W
Frequency - Transition-
Operating Temperature-65°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-213AA, TO-66-2
Supplier Device PackageTO-66 (TO-213AA)

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