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2N3867P

In Stock: 3,492
2N3867P - Microchip Technology - Transistors - Bipolar (BJT) - Single
REF: 2N3867P Microchip Technology
2N3867P

Microchip Technology

POWER BJT

2N3867P is a Transistors - Bipolar (BJT) - Single manufactured by Microchip Technology. POWER BJT. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 200°C, package / case TO-205AA, TO-5-3 Metal Can, current - collector (ic) (max) 3 A.

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In Stock: 3,492

Specifications

13 parameters
Product StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)40 V
Vce Saturation (Max) @ Ib, Ic1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max)1µA
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 500mA, 1V
Power - Max1 W
Frequency - Transition-
Operating Temperature-55°C ~ 200°C
Mounting TypeThrough Hole
Package / CaseTO-205AA, TO-5-3 Metal Can
Supplier Device PackageTO-5AA

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