2N3789 - Microchip Technology - Transistors - Bipolar (BJT) - Single
REF: 2N3789 Microchip Technology
2N3789

Microchip Technology

POWER BJT

2N3789 is a Transistors - Bipolar (BJT) - Single manufactured by Microchip Technology. POWER BJT. Key specifications: mounting type Through Hole, package / case TO-204AA, TO-3, current - collector (ic) (max) 10 A, power - max 150 W.

In Stock: 3,673

Specifications

13 parameters
Product StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)10 A
Voltage - Collector Emitter Breakdown (Max)60 V
Vce Saturation (Max) @ Ib, Ic-
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Power - Max150 W
Frequency - Transition-
Operating Temperature-
Mounting TypeThrough Hole
Package / CaseTO-204AA, TO-3
Supplier Device Package-

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