2N3585P - Microchip Technology - Transistors - Bipolar (BJT) - Single
REF: 2N3585P Microchip Technology
2N3585P

Microchip Technology

POWER BJT

2N3585P is a Transistors - Bipolar (BJT) - Single manufactured by Microchip Technology. POWER BJT. Key specifications: mounting type Through Hole, operating temperature -65°C ~ 200°C (TJ), package / case TO-213AA, TO-66-2, current - collector (ic) (max) 2 A.

In Stock: 6,851

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)300 V
Vce Saturation (Max) @ Ib, Ic750mV @ 125mA, 1A
Current - Collector Cutoff (Max)5mA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 100mA, 10V
Power - Max2.5 W
Frequency - Transition-
Operating Temperature-65°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-213AA, TO-66-2
Supplier Device PackageTO-66 (TO-213AA)

Need a Quote for 2N3585P?

Submit your RFQ and get a quote within 24 hours.

Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →