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2N2879

In Stock: 6,527
2N2879 - Microchip Technology - Transistors - Bipolar (BJT) - Single
REF: 2N2879 Microchip Technology
2N2879

Microchip Technology

POWER BJT

2N2879 is a Transistors - Bipolar (BJT) - Single manufactured by Microchip Technology. POWER BJT. Key specifications: mounting type Stud Mount, operating temperature -65°C ~ 200°C (TJ), package / case TO-111-4, Stud, current - collector (ic) (max) 5 A.

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In Stock: 6,527

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)5 A
Voltage - Collector Emitter Breakdown (Max)80 V
Vce Saturation (Max) @ Ib, Ic250mV @ 100µA, 1mA
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Power - Max30 W
Frequency - Transition-
Operating Temperature-65°C ~ 200°C (TJ)
Mounting TypeStud Mount
Package / CaseTO-111-4, Stud
Supplier Device PackageTO-111

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