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2N2779

In Stock: 6,856
2N2779 - Microchip Technology - Transistors - Bipolar (BJT) - Single
REF: 2N2779 Microchip Technology
2N2779

Microchip Technology

POWER BJT

2N2779 is a Transistors - Bipolar (BJT) - Single manufactured by Microchip Technology. POWER BJT. Key specifications: mounting type Stud Mount, operating temperature -65°C ~ 200°C (TJ), package / case TO-211MB, TO-63-4, Stud, current - collector (ic) (max) 30 A.

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In Stock: 6,856

Specifications

13 parameters
Product StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)30 A
Voltage - Collector Emitter Breakdown (Max)250 V
Vce Saturation (Max) @ Ib, Ic-
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Power - Max200 W
Frequency - Transition-
Operating Temperature-65°C ~ 200°C (TJ)
Mounting TypeStud Mount
Package / CaseTO-211MB, TO-63-4, Stud
Supplier Device PackageTO-63

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