MWI50-12E6K - IXYS - Transistors - IGBTs - Modules
REF: MWI50-12E6K IXYS
MWI50-12E6K

IXYS

IGBT MODULE 1200V 51A 210W E1

MWI50-12E6K is a Transistors - IGBTs - Modules manufactured by IXYS. IGBT MODULE 1200V 51A 210W E1. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 125°C (TJ), package / case E1, current - collector (ic) (max) 51 A.

In Stock: 6,099

Specifications

15 parameters
Product StatusObsolete
IGBT Type-
ConfigurationThree Phase Inverter
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)51 A
Power - Max210 W
Vce(on) (Max) @ Vge, Ic2.9V @ 15V, 35A
Current - Collector Cutoff (Max)300 µA
Input Capacitance (Cies) @ Vce2 nF @ 25 V
InputStandard
NTC ThermistorYes
Operating Temperature-40°C ~ 125°C (TJ)
Mounting TypeChassis Mount
Package / CaseE1
Supplier Device PackageE1

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