MWI50-12A7 - IXYS - Transistors - IGBTs - Modules
REF: MWI50-12A7 IXYS
MWI50-12A7

IXYS

IGBT MODULE 1200V 85A 350W E2

MWI50-12A7 is a Transistors - IGBTs - Modules manufactured by IXYS. IGBT MODULE 1200V 85A 350W E2. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 150°C (TJ), package / case E2, current - collector (ic) (max) 85 A.

In Stock: 4,992

Specifications

15 parameters
Product StatusActive
IGBT TypeNPT
ConfigurationThree Phase Inverter
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)85 A
Power - Max350 W
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 50A
Current - Collector Cutoff (Max)4 mA
Input Capacitance (Cies) @ Vce3.3 nF @ 25 V
InputStandard
NTC ThermistorNo
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseE2
Supplier Device PackageE2

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