MIO1200-33E10 - IXYS - Transistors - IGBTs - Modules
REF: MIO1200-33E10 IXYS
MIO1200-33E10

IXYS

IGBT MODULE 3300V 1200A E10

MIO1200-33E10 is a Transistors - IGBTs - Modules manufactured by IXYS. IGBT MODULE 3300V 1200A E10. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 125°C (TJ), package / case E10, current - collector (ic) (max) 1200 A.

In Stock: 9,685

Specifications

15 parameters
Product StatusActive
IGBT TypeNPT
ConfigurationSingle Switch
Voltage - Collector Emitter Breakdown (Max)3300 V
Current - Collector (Ic) (Max)1200 A
Power - Max-
Vce(on) (Max) @ Vge, Ic3.1V @ 15V, 1200A
Current - Collector Cutoff (Max)120 mA
Input Capacitance (Cies) @ Vce187 nF @ 25 V
InputStandard
NTC ThermistorNo
Operating Temperature-40°C ~ 125°C (TJ)
Mounting TypeChassis Mount
Package / CaseE10
Supplier Device PackageE10

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