MII200-12A4 - IXYS - Transistors - IGBTs - Modules
REF: MII200-12A4 IXYS
MII200-12A4

IXYS

IGBT MOD 1200V 270A 1130W Y3DCB

MII200-12A4 is a Transistors - IGBTs - Modules manufactured by IXYS. IGBT MOD 1200V 270A 1130W Y3DCB. Key specifications: mounting type Chassis Mount, operating temperature 150°C (TJ), package / case Y3-DCB, current - collector (ic) (max) 270 A.

In Stock: 7,717

Specifications

15 parameters
Product StatusActive
IGBT TypeNPT
ConfigurationHalf Bridge
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)270 A
Power - Max1130 W
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 150A
Current - Collector Cutoff (Max)10 mA
Input Capacitance (Cies) @ Vce11 nF @ 25 V
InputStandard
NTC ThermistorNo
Operating Temperature150°C (TJ)
Mounting TypeChassis Mount
Package / CaseY3-DCB
Supplier Device PackageY3-DCB

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