MII100-12A3 - IXYS - Transistors - IGBTs - Modules
REF: MII100-12A3 IXYS
MII100-12A3

IXYS

IGBT MODULE 1200V 135A 560W Y4M5

MII100-12A3 is a Transistors - IGBTs - Modules manufactured by IXYS. IGBT MODULE 1200V 135A 560W Y4M5. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 150°C (TJ), package / case Y4-M5, current - collector (ic) (max) 135 A.

In Stock: 1,467

Specifications

15 parameters
Product StatusActive
IGBT TypeNPT
ConfigurationHalf Bridge
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)135 A
Power - Max560 W
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 75A
Current - Collector Cutoff (Max)5 mA
Input Capacitance (Cies) @ Vce5.5 nF @ 25 V
InputStandard
NTC ThermistorNo
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseY4-M5
Supplier Device PackageY4-M5

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