MIEB101W1200EH

In Stock: 3,622
MIEB101W1200EH - IXYS - Transistors - IGBTs - Modules
REF: MIEB101W1200EH IXYS
MIEB101W1200EH

IXYS

IGBT MODULE 1200V 183A 630W E3

MIEB101W1200EH is a Transistors - IGBTs - Modules manufactured by IXYS. IGBT MODULE 1200V 183A 630W E3. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 125°C (TJ), package / case E3, current - collector (ic) (max) 183 A.

In Stock: 3,622

Specifications

15 parameters
Product StatusActive
IGBT Type-
ConfigurationThree Phase Inverter
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)183 A
Power - Max630 W
Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 100A
Current - Collector Cutoff (Max)300 µA
Input Capacitance (Cies) @ Vce7.43 nF @ 25 V
InputStandard
NTC ThermistorNo
Operating Temperature-40°C ~ 125°C (TJ)
Mounting TypeChassis Mount
Package / CaseE3
Supplier Device PackageE3

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