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IGN1011L70

In Stock: 11
IGN1011L70 - Integra Technologies Inc. - Transistors - FETs, MOSFETs - RF
REF: IGN1011L70 Integra Technologies Inc.
IGN1011L70

Integra Technologies Inc.

GAN, RF POWER TRANSISTOR, L-BAND

IGN1011L70 is a Transistors - FETs, MOSFETs - RF manufactured by Integra Technologies Inc.. GAN, RF POWER TRANSISTOR, L-BAND. Key specifications: voltage - rated 120 V, package / case PL32A2, current - test 22 mA, power - output 80W.

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In Stock: 11

Specifications

12 parameters
Product StatusActive
Transistor TypeGaN HEMT
Frequency1.03GHz ~ 1.09GHz
Gain22dB
Voltage - Test50 V
Current Rating (Amps)-
Noise Figure-
Current - Test22 mA
Power - Output80W
Voltage - Rated120 V
Package / CasePL32A2
Supplier Device PackagePL32A2

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